Tunneling Currents in Zinc Oxide
نویسندگان
چکیده
منابع مشابه
Modeling CMOS Tunneling Currents Through Ultrathin Gate Oxide Due to Conduction- and Valence-Band Electron and Hole Tunneling
A semi-empirical model is proposed to quantify the tunneling currents through ultrathin gate oxides (1–3.6 nm). As a multiplier to a simple analytical model [1], [2], a correction function is introduced to achieve universal applicability to all different combinations of bias polarities (inversion and accumulation), gate materials (N, P, Si, SiGe) and tunneling processes. Each coefficient of the...
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